BSIM-MG: A versatile multi-gate FET model for mixed-signal design

Mohan V. Dunga, Chung Hsun Lin, Darsen D. Lu, Weize Xiong, C. R. Cleavelin, P. Patruno, Jiunn Ren Hwang, Fu Liang Yang, Ali M. Niknejad, Chenming Hu

Research output: Contribution to journalConference articlepeer-review

41 Citations (Scopus)


A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

Original languageEnglish
Article number4339727
Pages (from-to)60-61
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2007 Dec 1
Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
Duration: 2007 Jun 122007 Jun 14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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