BSIM3v3-based varactor model

C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, H. Y. Lee

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A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).

Original languageEnglish
Pages (from-to)525-527
Number of pages3
JournalElectronics Letters
Issue number8
Publication statusPublished - 2001 Apr 12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Su, C. Y., Chen, L. P., Chang, S. J., Tseng, B. M., Lin, D. C., & Lee, H. Y. (2001). BSIM3v3-based varactor model. Electronics Letters, 37(8), 525-527.