A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering