BSIM3v3-based varactor model

C. Y. Su; L. P. Chen; S. J. Chang; B. M. Tseng; D. C. Lin; H. Y. Lee

doi:10.1049/el:20010355

BSIM3v3-based varactor model

C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, H. Y. Lee

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).

Original language	English
Pages (from-to)	525-527
Number of pages	3
Journal	Electronics Letters
Volume	37
Issue number	8
DOIs	https://doi.org/10.1049/el:20010355
Publication status	Published - 2001 Apr 12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20010355

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@article{9da9a53fa3c94646baf549454abb0dae,

title = "BSIM3v3-based varactor model",

abstract = "A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).",

author = "Su, {C. Y.} and Chen, {L. P.} and Chang, {S. J.} and Tseng, {B. M.} and Lin, {D. C.} and Lee, {H. Y.}",

year = "2001",

month = apr,

day = "12",

doi = "10.1049/el:20010355",

language = "English",

volume = "37",

pages = "525--527",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "8",

}

TY - JOUR

T1 - BSIM3v3-based varactor model

AU - Su, C. Y.

AU - Chen, L. P.

AU - Chang, S. J.

AU - Tseng, B. M.

AU - Lin, D. C.

AU - Lee, H. Y.

PY - 2001/4/12

Y1 - 2001/4/12

N2 - A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).

AB - A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits (RFICs).

UR - http://www.scopus.com/inward/record.url?scp=0035848730&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035848730&partnerID=8YFLogxK

U2 - 10.1049/el:20010355

DO - 10.1049/el:20010355

M3 - Article

AN - SCOPUS:0035848730

SN - 0013-5194

VL - 37

SP - 525

EP - 527

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

BSIM3v3-based varactor model

Abstract

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