BTI-aware sleep transistor sizing algorithm for reliable power gating designs

Kai Chiang Wu, Ing-Chao Lin, Yao Te Wang, Shuen Shiang Yang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Power gating is an effective way to reduce leakage power. This technique uses high Vth transistors, called sleep transistors, to turn off the power supply. However, sleep transistors suffer from the bias temperature instability (BTI) effect, resulting in an increased Vth, and reduced reliability. This paper proposes two BTI-aware sleep transistor sizing algorithms to reduce the total width of sleep transistors based on the distributed sleep transistor network structure. The proposed algorithms reduce total width by more than 16.08%. More area can be reduced if the BTI effect on both sleep and cluster transistors is considered.

Original languageEnglish
Article number6899800
Pages (from-to)1591-1595
Number of pages5
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume33
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

All Science Journal Classification (ASJC) codes

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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