Abstract
This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.
Original language | English |
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Pages (from-to) | 579-583 |
Number of pages | 5 |
Journal | Crystal Growth and Design |
Volume | 5 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2005 Mar |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics