Buffer-facilitated epitaxial growth of ZnO nanowire

Yan Ru Lin, Yung Kuan Tseng, Shang Shian Yang, Shinn Tyan Wu, Cheng Liang Hsu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.

Original languageEnglish
Pages (from-to)579-583
Number of pages5
JournalCrystal Growth and Design
Issue number2
Publication statusPublished - 2005 Mar

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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