Buffer-facilitated epitaxial growth of ZnO nanowire

Yan Ru Lin; Yung Kuan Tseng; Shang Shian Yang; Shinn Tyan Wu; Cheng Liang Hsu; Shoou Jinn Chang

doi:10.1021/cg049747h

Buffer-facilitated epitaxial growth of ZnO nanowire

Yan Ru Lin, Yung Kuan Tseng, Shang Shian Yang, Shinn Tyan Wu, Cheng Liang Hsu, Shoou Jinn Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.

Original language	English
Pages (from-to)	579-583
Number of pages	5
Journal	Crystal Growth and Design
Volume	5
Issue number	2
DOIs	https://doi.org/10.1021/cg049747h
Publication status	Published - 2005 Mar

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1021/cg049747h

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AU - Tseng, Yung Kuan

AU - Yang, Shang Shian

AU - Wu, Shinn Tyan

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

PY - 2005/3

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AB - This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.

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Buffer-facilitated epitaxial growth of ZnO nanowire

Abstract

All Science Journal Classification (ASJC) codes

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