Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

Sanjoy Paul, C. Swartz, Sandeep Sohal, C. Grice, Sandip Singh Bista, Deng Bing Li, Y. Yan, Mark Holtz, Jian V. Li

Research output: Contribution to journalArticle

Abstract

Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO2:F/SnO2/CdS:O-buffer/CdTe-absorber/Cu/Au. Device properties are compared with CdTe solar cells in which the back surface was hydroiodic acid etched, before the back-contact formation, and a CdTe device in which Mg-doped ZnO (MZO) replaces buffer layers. Reduced back-contact barrier height and grain boundary barrier height are observed in the hydroiodic acid treated CdTe cell. Improved device performance in the MZO-based CdTe device is attributed to reduced emitter/absorber interface recombination when using the MZO window layer.

Original languageEnglish
Pages (from-to)385-392
Number of pages8
JournalThin Solid Films
Volume685
DOIs
Publication statusPublished - 2019 Sep 1

Fingerprint

absorbers
Solar cells
Buffers
buffers
solar cells
Acids
Buffer layers
Current voltage characteristics
Lime
Electronic properties
acids
Grain boundaries
calcium oxides
Capacitance
Spectroscopy
Glass
emitters
grain boundaries
capacitance
glass

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Paul, Sanjoy ; Swartz, C. ; Sohal, Sandeep ; Grice, C. ; Bista, Sandip Singh ; Li, Deng Bing ; Yan, Y. ; Holtz, Mark ; Li, Jian V. / Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells. In: Thin Solid Films. 2019 ; Vol. 685. pp. 385-392.
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Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells. / Paul, Sanjoy; Swartz, C.; Sohal, Sandeep; Grice, C.; Bista, Sandip Singh; Li, Deng Bing; Yan, Y.; Holtz, Mark; Li, Jian V.

In: Thin Solid Films, Vol. 685, 01.09.2019, p. 385-392.

Research output: Contribution to journalArticle

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T1 - Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

AU - Paul, Sanjoy

AU - Swartz, C.

AU - Sohal, Sandeep

AU - Grice, C.

AU - Bista, Sandip Singh

AU - Li, Deng Bing

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AB - Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO2:F/SnO2/CdS:O-buffer/CdTe-absorber/Cu/Au. Device properties are compared with CdTe solar cells in which the back surface was hydroiodic acid etched, before the back-contact formation, and a CdTe device in which Mg-doped ZnO (MZO) replaces buffer layers. Reduced back-contact barrier height and grain boundary barrier height are observed in the hydroiodic acid treated CdTe cell. Improved device performance in the MZO-based CdTe device is attributed to reduced emitter/absorber interface recombination when using the MZO window layer.

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