c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

Yi Hao Chen, Shoou Jinn Chang, Cheng Liang Hsu, Yao Kun Wu, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 1020 cm-3. The efficiency of the fabricated SiNx/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade-1 and over 104, respectively.

Original languageEnglish
Pages (from-to)96547-96550
Number of pages4
JournalRSC Advances
Volume5
Issue number117
DOIs
Publication statusPublished - 2015 Nov 6

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering

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