Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells

Jian V. Li, Richard S. Crandall, David L. Young, Matthew R. Page, Eugene Iwaniczko, Qi Wang

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We use capacitance techniques to directly measure the Fermi level at the crystalline/amorphous interface in n-type silicon heterojunction solar cells. The hole density calculated from the Fermi level position and the inferred band-bending picture show strong inversion of (n)crystalline silicon at the interface at equilibrium. Bias dependent experiments show that the Fermi level is not pinned at the interface. Instead, it moves farther from and closer to the crystalline silicon valence band under a reverse and forward bias, respectively. Under a forward bias or illumination, the Fermi level at the interface moves closer to the crystalline silicon valence band thus increases the excess hole density and band bending at the interface. This band bending further removes majority electrons away from the interface leading to lower interface recombination and higher open-circuit voltage.

Original languageEnglish
Article number114502
JournalJournal of Applied Physics
Volume110
Issue number11
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells'. Together they form a unique fingerprint.

Cite this