Capless annealing of ion implanted GaAs in automatically evaporated vapor

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3 Citations (Scopus)

Abstract

A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this method is almost the same as those obtained by the other usual annealing methods, but the transition region can be reduced significantly. Furthermore, the surface morphology is better than that obtained by dielectric encapsulant annealing methods.

Original languageEnglish
Pages (from-to)554-556
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number6
DOIs
Publication statusPublished - 1985 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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