Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

H. Ahn; C. H. Shen; C. L. Wu; S. Gwo

doi:10.1016/j.tsf.2005.07.177

Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

H. Ahn, C. H. Shen, C. L. Wu, S. Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si₃N₄/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.

Original language	English
Pages (from-to)	69-73
Number of pages	5
Journal	Thin Solid Films
Volume	494
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.177
Publication status	Published - 2006 Jan 3

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.177

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@article{177553f300494d50b169ff70969019f4,

title = "Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry",

abstract = "The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.",

author = "H. Ahn and Shen, {C. H.} and Wu, {C. L.} and S. Gwo",

note = "Funding Information: This work was partly supported by the National Science Council, Taiwan (Grant No. NSC 93-2112-M-007-010). The authors acknowledge Prof. T.M. Hsu of National Central University for the Hall measurements.",

year = "2006",

month = jan,

day = "3",

doi = "10.1016/j.tsf.2005.07.177",

language = "English",

volume = "494",

pages = "69--73",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

AU - Ahn, H.

AU - Shen, C. H.

AU - Wu, C. L.

AU - Gwo, S.

N1 - Funding Information: This work was partly supported by the National Science Council, Taiwan (Grant No. NSC 93-2112-M-007-010). The authors acknowledge Prof. T.M. Hsu of National Central University for the Hall measurements.

PY - 2006/1/3

Y1 - 2006/1/3

N2 - The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.

AB - The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=27844462512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27844462512&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.177

DO - 10.1016/j.tsf.2005.07.177

M3 - Article

AN - SCOPUS:27844462512

SN - 0040-6090

VL - 494

SP - 69

EP - 73

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

Abstract

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