Abstract
The investigation of the carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions was discussed. The luminous efficacy of a Gaussian dichromatic white-light source was also calculated. The luminous efficacies ranging from 380 to 440 lm/W were obtained for broadened dichromatic sources.
Original language | English |
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Pages (from-to) | 2167-2172 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2003 Aug 15 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy