Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

Y. L. Li, Th Gessmann, E. F. Schubert, J. K. Sheu

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

The investigation of the carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions was discussed. The luminous efficacy of a Gaussian dichromatic white-light source was also calculated. The luminous efficacies ranging from 380 to 440 lm/W were obtained for broadened dichromatic sources.

Original languageEnglish
Pages (from-to)2167-2172
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
Publication statusPublished - 2003 Aug 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths'. Together they form a unique fingerprint.

Cite this