Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

S. Sohal, M. Edirisooriya, O. S. Ogedengbe, J. E. Petersen, C. H. Swartz, E. G. LeBlanc, T. H. Myers, J. V. Li, M. Holtz

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 1015 cm−3, 8.4 × 1016 cm−3, and 8.4 × 1017 cm−3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ∼8 × 1015 cm−3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm−3 and 8.4 × 1016 cm−3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

Original languageEnglish
Pages (from-to)5361-5366
Number of pages6
JournalJournal of Electronic Materials
Volume46
Issue number9
DOIs
Publication statusPublished - 2017 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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