Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

S. Sohal; M. Edirisooriya; O. S. Ogedengbe; J. E. Petersen; C. H. Swartz; E. G. LeBlanc; T. H. Myers; J. V. Li; M. Holtz

doi:10.1007/s11664-017-5646-y

Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

S. Sohal
, M. Edirisooriya
, O. S. Ogedengbe
, J. E. Petersen
, C. H. Swartz
, E. G. LeBlanc
, T. H. Myers
, J. V. Li
, M. Holtz

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 10¹⁵ cm⁻³, 8.4 × 10¹⁶ cm⁻³, and 8.4 × 10¹⁷ cm⁻³ using iodine as dopant in DHs. Optical injection at 1 × 10¹⁰ photons/pulse/cm² to 3 × 10¹¹ photons/pulse/cm², corresponding to initial injection of photocarriers up to ∼8 × 10¹⁵ cm⁻³, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 10¹⁵ cm⁻³ and 8.4 × 10¹⁶ cm⁻³. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

Original language	English
Pages (from-to)	5361-5366
Number of pages	6
Journal	Journal of Electronic Materials
Volume	46
Issue number	9
DOIs	https://doi.org/10.1007/s11664-017-5646-y
Publication status	Published - 2017 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy",

abstract = "Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 1015 cm−3, 8.4 × 1016 cm−3, and 8.4 × 1017 cm−3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ∼8 × 1015 cm−3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm−3 and 8.4 × 1016 cm−3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.",

author = "S. Sohal and M. Edirisooriya and Ogedengbe, \{O. S.\} and Petersen, \{J. E.\} and Swartz, \{C. H.\} and LeBlanc, \{E. G.\} and Myers, \{T. H.\} and Li, \{J. V.\} and M. Holtz",

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doi = "10.1007/s11664-017-5646-y",

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T1 - Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

AU - Sohal, S.

AU - Edirisooriya, M.

AU - Ogedengbe, O. S.

AU - Petersen, J. E.

AU - Swartz, C. H.

AU - LeBlanc, E. G.

AU - Myers, T. H.

AU - Li, J. V.

AU - Holtz, M.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 1015 cm−3, 8.4 × 1016 cm−3, and 8.4 × 1017 cm−3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ∼8 × 1015 cm−3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm−3 and 8.4 × 1016 cm−3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

AB - Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 1015 cm−3, 8.4 × 1016 cm−3, and 8.4 × 1017 cm−3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ∼8 × 1015 cm−3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm−3 and 8.4 × 1016 cm−3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

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Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

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