Carrier transport properties in a thin-film Cu                         2                         ZnSnSe                         4                          solar cell

Sanjoy Paul; Istvan Gulyas; Ingrid L. Repins; Shin Mou; Jian V. Li

doi:10.1016/j.tsf.2019.01.052

Carrier transport properties in a thin-film Cu ₂ ZnSnSe ₄ solar cell

Sanjoy Paul, Istvan Gulyas, Ingrid L. Repins, Shin Mou, Jian V. Li

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu ₂ ZnSnSe ₄ (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

Original language	English
Pages (from-to)	103-108
Number of pages	6
Journal	Thin Solid Films
Volume	675
DOIs	https://doi.org/10.1016/j.tsf.2019.01.052
Publication status	Published - 2019 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2019.01.052

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title = " Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell ",

abstract = " We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.",

author = "Sanjoy Paul and Istvan Gulyas and Repins, {Ingrid L.} and Shin Mou and Li, {Jian V.}",

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Carrier transport properties in a thin-film Cu ₂ ZnSnSe ₄ solar cell . / Paul, Sanjoy; Gulyas, Istvan; Repins, Ingrid L. et al.
In: Thin Solid Films, Vol. 675, 01.04.2019, p. 103-108.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell

AU - Paul, Sanjoy

AU - Gulyas, Istvan

AU - Repins, Ingrid L.

AU - Mou, Shin

AU - Li, Jian V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

AB - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

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JO - Thin Solid Films

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Carrier transport properties in a thin-film Cu ₂ ZnSnSe ₄ solar cell

Abstract

All Science Journal Classification (ASJC) codes

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