Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell

Sanjoy Paul, Istvan Gulyas, Ingrid L. Repins, Shin Mou, Jian V. Li

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

Original languageEnglish
Pages (from-to)103-108
Number of pages6
JournalThin Solid Films
Volume675
DOIs
Publication statusPublished - 2019 Apr 1

Fingerprint

Carrier transport
Transport properties
Solar cells
solar cells
transport properties
Thin films
Carrier concentration
thin films
Activation energy
electrical resistivity
Dielectric relaxation
Temperature
activation energy
Capacitance
majority carriers
Spectroscopy
Crystalline materials
electrical impedance
Electric potential
absorbers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Paul, Sanjoy ; Gulyas, Istvan ; Repins, Ingrid L. ; Mou, Shin ; Li, Jian V. / Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell In: Thin Solid Films. 2019 ; Vol. 675. pp. 103-108.
@article{f6ad0c58847947719b5428bc655f726c,
title = "Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell",
abstract = "We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.",
author = "Sanjoy Paul and Istvan Gulyas and Repins, {Ingrid L.} and Shin Mou and Li, {Jian V.}",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.tsf.2019.01.052",
language = "English",
volume = "675",
pages = "103--108",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell . / Paul, Sanjoy; Gulyas, Istvan; Repins, Ingrid L.; Mou, Shin; Li, Jian V.

In: Thin Solid Films, Vol. 675, 01.04.2019, p. 103-108.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell

AU - Paul, Sanjoy

AU - Gulyas, Istvan

AU - Repins, Ingrid L.

AU - Mou, Shin

AU - Li, Jian V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

AB - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

UR - http://www.scopus.com/inward/record.url?scp=85062046053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062046053&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.01.052

DO - 10.1016/j.tsf.2019.01.052

M3 - Article

AN - SCOPUS:85062046053

VL - 675

SP - 103

EP - 108

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -