Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)2PbBr4 Perovskite

Sheng Chan Wu; Chun Sheng Wu; Ching Hang Chien; Yu Wei Zhang; Chung Xian Yang; Cheng Liu; Ming Hsien Li; Chen Fu Lin; Yu Hao Wu; Bi Hsuan Lin; Yu Hsun Chou; Yia Chung Chang; Peter Chen; Hsu Cheng Hsu

doi:10.1002/adfm.202213427

Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)₂PbBr₄ Perovskite

Sheng Chan Wu, Chun Sheng Wu, Ching Hang Chien, Yu Wei Zhang, Chung Xian Yang, Cheng Liu, Ming Hsien Li, Chen Fu Lin, Yu Hao Wu, Bi Hsuan Lin, Yu Hsun Chou, Yia Chung Chang, Peter Chen, Hsu Cheng Hsu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The soft and polar nature of quasi-2D (PEA)₂PbBr₄ perovskite, and robust photo-generated excitons lead exciton-polaritons and exciton-polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature-dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi-particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi-2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton-polaritons and exciton-polarons are confirmed by energy dispersions and the observation of self-trapped exciton-polaron state, respectively. Furthermore, the large negative thermal-optic coefficient due to damping effect of exciton-phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal-optic coefficients from 160 K to RT indicate that the quasi-2D perovskite can be used as a phase compensator for conventional semiconductor materials.

Original language	English
Article number	2213427
Journal	Advanced Functional Materials
Volume	33
Issue number	25
DOIs	https://doi.org/10.1002/adfm.202213427
Publication status	Published - 2023 Jun 19

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
General Chemistry
General Materials Science
Electrochemistry
Biomaterials

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10.1002/adfm.202213427

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Wu, S. C., Wu, C. S., Chien, C. H., Zhang, Y. W., Yang, C. X., Liu, C., Li, M. H., Lin, C. F., Wu, Y. H., Lin, B. H., Chou, Y. H., Chang, Y. C., Chen, P., & Hsu, H. C. (2023). Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)₂PbBr₄ Perovskite. Advanced Functional Materials, 33(25), Article 2213427. https://doi.org/10.1002/adfm.202213427

@article{7bd8efe522fa4ddfa5c3ce6358c26984,

title = "Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)2PbBr4 Perovskite",

abstract = "The soft and polar nature of quasi-2D (PEA)2PbBr4 perovskite, and robust photo-generated excitons lead exciton-polaritons and exciton-polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature-dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi-particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi-2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton-polaritons and exciton-polarons are confirmed by energy dispersions and the observation of self-trapped exciton-polaron state, respectively. Furthermore, the large negative thermal-optic coefficient due to damping effect of exciton-phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal-optic coefficients from 160 K to RT indicate that the quasi-2D perovskite can be used as a phase compensator for conventional semiconductor materials.",

author = "Wu, {Sheng Chan} and Wu, {Chun Sheng} and Chien, {Ching Hang} and Zhang, {Yu Wei} and Yang, {Chung Xian} and Cheng Liu and Li, {Ming Hsien} and Lin, {Chen Fu} and Wu, {Yu Hao} and Lin, {Bi Hsuan} and Chou, {Yu Hsun} and Chang, {Yia Chung} and Peter Chen and Hsu, {Hsu Cheng}",

note = "Funding Information: The authors thank the financial support from Hierarchical Green‐Energy Materials (Hi‐GEM) Research Center, from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) and the Ministry of Science and Technology (MOST 111‐2112‐M‐006‐023‐MY3, MOST 111‐2112‐M‐001‐069, MOST 111‐2221‐E‐006‐061‐MY2, MOST 111‐2113‐M‐006‐009, MOST 110‐2634‐F‐006 ‐017, MOST 109‐2124‐M‐006‐001, MOST 111‐2112‐M‐213‐020, MOST 109‐2222‐E‐260‐001‐MY3, Young Scholar Fellowship Program MOST 111‐2636‐M‐006 ‐025) in Taiwan. This research was also supported in part by Higher Education Sprout Project, Ministry of Education to the Headquarters of University Advancement at National Cheng Kung University. The authors also gratefully acknowledge the use of code XRD005101 of the machine equipment belonging to the Core Facility Center of National Cheng Kung University. Publisher Copyright: {\textcopyright} 2023 Wiley-VCH GmbH.",

year = "2023",

month = jun,

day = "19",

doi = "10.1002/adfm.202213427",

language = "English",

volume = "33",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "Wiley-VCH Verlag",

number = "25",

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TY - JOUR

T1 - Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)2PbBr4 Perovskite

AU - Wu, Sheng Chan

AU - Wu, Chun Sheng

AU - Chien, Ching Hang

AU - Zhang, Yu Wei

AU - Yang, Chung Xian

AU - Liu, Cheng

AU - Li, Ming Hsien

AU - Lin, Chen Fu

AU - Wu, Yu Hao

AU - Lin, Bi Hsuan

AU - Chou, Yu Hsun

AU - Chang, Yia Chung

AU - Chen, Peter

AU - Hsu, Hsu Cheng

N1 - Funding Information: The authors thank the financial support from Hierarchical Green‐Energy Materials (Hi‐GEM) Research Center, from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) and the Ministry of Science and Technology (MOST 111‐2112‐M‐006‐023‐MY3, MOST 111‐2112‐M‐001‐069, MOST 111‐2221‐E‐006‐061‐MY2, MOST 111‐2113‐M‐006‐009, MOST 110‐2634‐F‐006 ‐017, MOST 109‐2124‐M‐006‐001, MOST 111‐2112‐M‐213‐020, MOST 109‐2222‐E‐260‐001‐MY3, Young Scholar Fellowship Program MOST 111‐2636‐M‐006 ‐025) in Taiwan. This research was also supported in part by Higher Education Sprout Project, Ministry of Education to the Headquarters of University Advancement at National Cheng Kung University. The authors also gratefully acknowledge the use of code XRD005101 of the machine equipment belonging to the Core Facility Center of National Cheng Kung University. Publisher Copyright: © 2023 Wiley-VCH GmbH.

PY - 2023/6/19

Y1 - 2023/6/19

N2 - The soft and polar nature of quasi-2D (PEA)2PbBr4 perovskite, and robust photo-generated excitons lead exciton-polaritons and exciton-polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature-dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi-particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi-2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton-polaritons and exciton-polarons are confirmed by energy dispersions and the observation of self-trapped exciton-polaron state, respectively. Furthermore, the large negative thermal-optic coefficient due to damping effect of exciton-phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal-optic coefficients from 160 K to RT indicate that the quasi-2D perovskite can be used as a phase compensator for conventional semiconductor materials.

AB - The soft and polar nature of quasi-2D (PEA)2PbBr4 perovskite, and robust photo-generated excitons lead exciton-polaritons and exciton-polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature-dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi-particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi-2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton-polaritons and exciton-polarons are confirmed by energy dispersions and the observation of self-trapped exciton-polaron state, respectively. Furthermore, the large negative thermal-optic coefficient due to damping effect of exciton-phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal-optic coefficients from 160 K to RT indicate that the quasi-2D perovskite can be used as a phase compensator for conventional semiconductor materials.

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U2 - 10.1002/adfm.202213427

DO - 10.1002/adfm.202213427

M3 - Article

AN - SCOPUS:85150773015

SN - 1616-301X

VL - 33

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 25

M1 - 2213427

ER -

Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)₂PbBr₄ Perovskite

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