Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers

Shoou Jinn Chang, Wei Heng Lin, Wei Shou Chen

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJLs) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05 × 10-3 and 1.95 × 10-3Ω · cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

Original languageEnglish
Article number7123568
JournalIEEE Journal of Quantum Electronics
Volume51
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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