Catalyst-free growth of large scale Ga2O3 nanowires

Ko Wei Chang, Sai Chang Liu, Liang Yih Chen, Franklin Chau Nan Hong, Jih Jen Wu

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002 Jan 1
EventNanophase and Nanocomposite Materials IV - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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