Catalyst-free growth of large scale Ga2O3 nanowires

Ko Wei Chang; Sai Chang Liu; Liang Yih Chen; Franklin Chau Nan Hong; Jih Jen Wu

Catalyst-free growth of large scale Ga₂O₃ nanowires

Ko Wei Chang
, Sai Chang Liu
, Liang Yih Chen
, Franklin Chau Nan Hong
, Jih Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Large scale of straight Ga₂O₃ nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N₂/H₂O reactants. The Ga₂O₃ nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga₂O₃ nanowires exhibit a monoclinic structure. PL characteristic of the Ga₂O₃ nanowires shows a UV emission of 375 nm at room temperature.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	703
Publication status	Published - 2002
Event	Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Catalyst-free growth of large scale Ga2O3 nanowires",

abstract = "Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.",

author = "Chang, \{Ko Wei\} and Liu, \{Sai Chang\} and Chen, \{Liang Yih\} and Hong, \{Franklin Chau Nan\} and Wu, \{Jih Jen\}",

year = "2002",

language = "English",

volume = "703",

pages = "129--134",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Nanophase and Nanocomposite Materials IV ; Conference date: 26-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - Catalyst-free growth of large scale Ga2O3 nanowires

AU - Chang, Ko Wei

AU - Liu, Sai Chang

AU - Chen, Liang Yih

AU - Hong, Franklin Chau Nan

AU - Wu, Jih Jen

PY - 2002

Y1 - 2002

N2 - Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

AB - Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

UR - https://www.scopus.com/pages/publications/0036350399

UR - https://www.scopus.com/pages/publications/0036350399#tab=citedBy

M3 - Conference article

AN - SCOPUS:0036350399

SN - 0272-9172

VL - 703

SP - 129

EP - 134

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Nanophase and Nanocomposite Materials IV

Y2 - 26 November 2001 through 29 November 2001

ER -

Catalyst-free growth of large scale Ga₂O₃ nanowires

Abstract

All Science Journal Classification (ASJC) codes

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