Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen, C. J. Pan, F. C. Tsao, Y. L. Liu, C. W. Kuo, C. H. Kuo, G. C. Chi, P. H. Chen, W. C. Lai, T. H. Hsueh, C. J. Tun, C. Y. Chang, S. J. Pearton, F. Ren

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8 Citations (Scopus)


ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

Original languageEnglish
Pages (from-to)803-806
Number of pages4
Issue number6
Publication statusPublished - 2010 Feb 4

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


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