Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen; C. J. Pan; F. C. Tsao; Y. L. Liu; C. W. Kuo; C. H. Kuo; G. C. Chi; P. H. Chen; W. C. Lai; T. H. Hsueh; C. J. Tun; C. Y. Chang; S. J. Pearton; F. Ren

doi:10.1016/j.vacuum.2009.10.043

Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen, C. J. Pan, F. C. Tsao, Y. L. Liu, C. W. Kuo, C. H. Kuo, G. C. Chi, P. H. Chen, W. C. Lai, T. H. Hsueh, C. J. Tun, C. Y. Chang, S. J. Pearton, F. Ren

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)_ZnO||(110)_GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

Original language	English
Pages (from-to)	803-806
Number of pages	4
Journal	Vacuum
Volume	84
Issue number	6
DOIs	https://doi.org/10.1016/j.vacuum.2009.10.043
Publication status	Published - 2010 Feb 4

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2009.10.043

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title = "Catalyst-free ZnO nanowires grown on a-plane GaN",

abstract = "ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.",

author = "Chen, {C. W.} and Pan, {C. J.} and Tsao, {F. C.} and Liu, {Y. L.} and Kuo, {C. W.} and Kuo, {C. H.} and Chi, {G. C.} and Chen, {P. H.} and Lai, {W. C.} and Hsueh, {T. H.} and Tun, {C. J.} and Chang, {C. Y.} and Pearton, {S. J.} and F. Ren",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under grant number NSC97-2112-M-008-016-MY3. The work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370, by the Army Research Office under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich and DMR 0400416, Dr. L. Hess).",

year = "2010",

month = feb,

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doi = "10.1016/j.vacuum.2009.10.043",

language = "English",

volume = "84",

pages = "803--806",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "6",

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TY - JOUR

T1 - Catalyst-free ZnO nanowires grown on a-plane GaN

AU - Chen, C. W.

AU - Pan, C. J.

AU - Tsao, F. C.

AU - Liu, Y. L.

AU - Kuo, C. W.

AU - Kuo, C. H.

AU - Chi, G. C.

AU - Chen, P. H.

AU - Lai, W. C.

AU - Hsueh, T. H.

AU - Tun, C. J.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Ren, F.

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under grant number NSC97-2112-M-008-016-MY3. The work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370, by the Army Research Office under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich and DMR 0400416, Dr. L. Hess).

PY - 2010/2/4

Y1 - 2010/2/4

N2 - ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

AB - ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

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EP - 806

JO - Vacuum

JF - Vacuum

IS - 6

ER -

Catalyst-free ZnO nanowires grown on a-plane GaN

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