β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800°C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2003 Mar 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)