Catalytic growth and characterization of Ga2O3 nanowires

K. W. Chang; Jih-Jen Wu

doi:10.1007/s00339-002-2016-1

Catalytic growth and characterization of Ga₂O₃ nanowires

K. W. Chang
, Jih-Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

β-Ga₂O₃ nanowires have been synthesized using Ga metal and H₂O vapor at 800°C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga₂O₃ nanowires are achieved by separation of Ga metal and H₂O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga₂O₃ nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.

Original language	English
Pages (from-to)	629-631
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	76
Issue number	4
DOIs	https://doi.org/10.1007/s00339-002-2016-1
Publication status	Published - 2003 Mar 1

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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10.1007/s00339-002-2016-1

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@article{54269ba0996d40bc9bc9d55aed187601,

title = "Catalytic growth and characterization of Ga2O3 nanowires",

abstract = "β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800°C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.",

author = "Chang, \{K. W.\} and Jih-Jen Wu",

year = "2003",

month = mar,

day = "1",

doi = "10.1007/s00339-002-2016-1",

language = "English",

volume = "76",

pages = "629--631",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "4",

}

TY - JOUR

T1 - Catalytic growth and characterization of Ga2O3 nanowires

AU - Chang, K. W.

AU - Wu, Jih-Jen

PY - 2003/3/1

Y1 - 2003/3/1

N2 - β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800°C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.

AB - β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800°C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.

UR - https://www.scopus.com/pages/publications/0037357185

UR - https://www.scopus.com/pages/publications/0037357185#tab=citedBy

U2 - 10.1007/s00339-002-2016-1

DO - 10.1007/s00339-002-2016-1

M3 - Article

AN - SCOPUS:0037357185

SN - 0947-8396

VL - 76

SP - 629

EP - 631

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Catalytic growth and characterization of Ga₂O₃ nanowires

Abstract

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