Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, J. L. Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Original languageEnglish
Pages (from-to)543-548
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume406
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 1995 Nov 271995 Nov 30

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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