Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao; M. B. Freiler; M. Levy; J. L. Lin; G. S. Cargill; R. M. Osgood; G. F. McLane

Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, J. L. Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Original language	English
Pages (from-to)	543-548
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	406
Publication status	Published - 1996 Jan 1
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: 1995 Nov 27 → 1995 Nov 30

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b6b614fcaaa44f3e82ba0b514b3ef612,

title = "Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures",

abstract = "We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.",

author = "Chao, {L. L.} and Freiler, {M. B.} and M. Levy and Lin, {J. L.} and Cargill, {G. S.} and Osgood, {R. M.} and McLane, {G. F.}",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "406",

pages = "543--548",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

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Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures. / Chao, L. L.; Freiler, M. B.; Levy, M.; Lin, J. L.; Cargill, G. S.; Osgood, R. M.; McLane, G. F.

In: Materials Research Society Symposium - Proceedings, Vol. 406, 01.01.1996, p. 543-548.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

AU - Chao, L. L.

AU - Freiler, M. B.

AU - Levy, M.

AU - Lin, J. L.

AU - Cargill, G. S.

AU - Osgood, R. M.

AU - McLane, G. F.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

AB - We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029735640&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029735640

VL - 406

SP - 543

EP - 548

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

Abstract

All Science Journal Classification (ASJC) codes

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