Abstract
We describe studies of luminescence and lateral transport properties of excited carriers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approx. 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.
Original language | English |
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Pages (from-to) | 543-548 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 406 |
Publication status | Published - 1996 Jan 1 |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: 1995 Nov 27 → 1995 Nov 30 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering