Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, Jong-Liang Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Original languageEnglish
Pages (from-to)429-434
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume405
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

Fingerprint

Cathodoluminescence
diffusion length
cathodoluminescence
Semiconductor quantum wells
quantum wells
Luminescence
luminescence
Transport properties
aluminum gallium arsenides
Electron microscopes
electron microscopes
transport properties
Scanning
temperature dependence
scanning
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chao, L. L. ; Freiler, M. B. ; Levy, M. ; Lin, Jong-Liang ; Cargill, G. S. ; Osgood, R. M. ; McLane, G. F. / Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 405. pp. 429-434.
@article{0b6ef13c183a4fd89fb74472664e9c6c,
title = "Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures",
abstract = "We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.",
author = "Chao, {L. L.} and Freiler, {M. B.} and M. Levy and Jong-Liang Lin and Cargill, {G. S.} and Osgood, {R. M.} and McLane, {G. F.}",
year = "1996",
month = "1",
day = "1",
language = "English",
volume = "405",
pages = "429--434",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures. / Chao, L. L.; Freiler, M. B.; Levy, M.; Lin, Jong-Liang; Cargill, G. S.; Osgood, R. M.; McLane, G. F.

In: Materials Research Society Symposium - Proceedings, Vol. 405, 01.01.1996, p. 429-434.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

AU - Chao, L. L.

AU - Freiler, M. B.

AU - Levy, M.

AU - Lin, Jong-Liang

AU - Cargill, G. S.

AU - Osgood, R. M.

AU - McLane, G. F.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

AB - We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

UR - http://www.scopus.com/inward/record.url?scp=0029726503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726503&partnerID=8YFLogxK

M3 - Conference article

VL - 405

SP - 429

EP - 434

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -