Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, J. L. Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Original languageEnglish
Pages (from-to)429-434
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume405
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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