Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao; M. B. Freiler; M. Levy; J. L. Lin; G. S. Cargill; R. M. Osgood; G. F. McLane

Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, J. L. Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Original language	English
Pages (from-to)	429-434
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	405
Publication status	Published - 1996 Jan 1
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 1995 Nov 26 → 1995 Dec 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{0b6ef13c183a4fd89fb74472664e9c6c,

title = "Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures",

abstract = "We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.",

author = "Chao, {L. L.} and Freiler, {M. B.} and M. Levy and Lin, {J. L.} and Cargill, {G. S.} and Osgood, {R. M.} and McLane, {G. F.}",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "405",

pages = "429--434",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures. / Chao, L. L.; Freiler, M. B.; Levy, M.; Lin, J. L.; Cargill, G. S.; Osgood, R. M.; McLane, G. F.

In: Materials Research Society Symposium - Proceedings, Vol. 405, 01.01.1996, p. 429-434.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

AU - Chao, L. L.

AU - Freiler, M. B.

AU - Levy, M.

AU - Lin, J. L.

AU - Cargill, G. S.

AU - Osgood, R. M.

AU - McLane, G. F.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

AB - We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

UR - http://www.scopus.com/inward/record.url?scp=0029726503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726503&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029726503

VL - 405

SP - 429

EP - 434

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -