Cd1 − xS:B/CuInSe2 interface of thin film solar cells improved with iodine passivation

Yu Song Cheng, Na Fu Wang, Yu Zen Tsai, Hsueh Ping Liu, Chen Ting Leng, Mau Phon Houng

Research output: Contribution to journalArticle

Abstract

This study revealed the band gap, visible transmittance, and crystallinity variation Cd1 − x S:B emitter layer at different boron concentrations, as well as the CuInSe2 absorption layer nucleation mechanism at pH values ranging from 1.53 to 2.13. CuInSe2 deposited at a pH of 1.73 showed the highest grain size (24.29 nm) and approached the stoichiometric state of [Cu]/[In] = 0.98, which produced was used for solar cells and Schottky diode. The conversion efficiency of Al/AZO/Cd1 − xS:B/CuInSe2/Mo/Glass structure cell was 2.37% (Voc: 293 mV, Jsc: 26.85 mA/cm2, and FF: 0.301). Moreover, the aluminum material were deposited on CuInSe2 as a Schottky diode (Al/CuInSe2/Mo/Glass), which diode was used to estimate the work function (Φ) and ideality factor (n) through Schottky barrier. These device parameters of Al/CuInSe2 structure was ΦCuInSe2 = 4.791 eV and n = 3.52, respectively. This result revealed that the Cd1 − xS:B/CuInSe2 interface state can cause Fermi-level pinning with an interface recombination velocity of 2.328 × 103 cm s− 1. This indicates the poor performance of Schottky diodes and thin film solar cells comprising Cd1 − xS:B/CuInSe2. However, experimental results demonstrated that the passivation of the surface by using iodine treatment can improve the Fermi-level pinning effect on Cd1 − xS:B/CuInSe2 interfaces.

Original languageEnglish
Pages (from-to)26-32
Number of pages7
JournalThin Solid Films
Volume627
DOIs
Publication statusPublished - 2017 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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