Abstract
We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.
| Original language | English |
|---|---|
| Pages (from-to) | 257-259 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 137 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2006 Feb 1 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Lin, Y. J., Lin, W. X., Lee, C. T., & Chien, F. T. (2006). Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment. Solid State Communications, 137(5), 257-259. https://doi.org/10.1016/j.ssc.2005.11.031