Abstract
We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.
Original language | English |
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Pages (from-to) | 257-259 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 137 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2006 Feb |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry