Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

Yow Jon Lin; Wen Xiang Lin; Ching Ting Lee; Feng Tso Chien

doi:10.1016/j.ssc.2005.11.031

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH₄)₂S_x treatment

Yow Jon Lin, Wen Xiang Lin, Ching Ting Lee, Feng Tso Chien

Department of Photonics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH ₄)₂S_x treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH₄) ₂S_x treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH₄)₂S_x-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

Original language	English
Pages (from-to)	257-259
Number of pages	3
Journal	Solid State Communications
Volume	137
Issue number	5
DOIs	https://doi.org/10.1016/j.ssc.2005.11.031
Publication status	Published - 2006 Feb

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2005.11.031

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@article{ead5c5aca0454452bf68f240e426e802,

title = "Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment",

abstract = "We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.",

author = "Lin, {Yow Jon} and Lin, {Wen Xiang} and Lee, {Ching Ting} and Chien, {Feng Tso}",

note = "Funding Information: The authors wish to acknowledge support by grants from National Science Council of Taiwan, Republic of China (Contract No. NSC 94-2112-M-018-007). The authors would like to thank Prof Y.S. Huang. The SPS measurements were kindly provided by the Semiconductor Characterization Lab (National Taiwan University of Science and Technology, Department of Electronic Engineering).",

year = "2006",

month = feb,

doi = "10.1016/j.ssc.2005.11.031",

language = "English",

volume = "137",

pages = "257--259",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "5",

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T1 - Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

AU - Lin, Yow Jon

AU - Lin, Wen Xiang

AU - Lee, Ching Ting

AU - Chien, Feng Tso

N1 - Funding Information: The authors wish to acknowledge support by grants from National Science Council of Taiwan, Republic of China (Contract No. NSC 94-2112-M-018-007). The authors would like to thank Prof Y.S. Huang. The SPS measurements were kindly provided by the Semiconductor Characterization Lab (National Taiwan University of Science and Technology, Department of Electronic Engineering).

PY - 2006/2

Y1 - 2006/2

N2 - We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

AB - We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH 4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4) 2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.

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DO - 10.1016/j.ssc.2005.11.031

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SN - 0038-1098

VL - 137

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JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH₄)₂S_x treatment

Abstract

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