Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain

Chia Ta Chang; Shih Kuang Hsiao; Edward Yi Chang; Chung Yu Lu; Jui Chien Huang; Ching Ting Lee

doi:10.1109/LED.2009.2012447

Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain

Chia Ta Chang, Shih Kuang Hsiao, Edward Yi Chang, Chung Yu Lu, Jui Chien Huang, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.

Original language	English
Pages (from-to)	213-215
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2012447
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2012447

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@article{8ee44175122640aca66c4421e690a7ca,

title = "Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain",

abstract = "This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.",

author = "Chang, {Chia Ta} and Hsiao, {Shih Kuang} and Chang, {Edward Yi} and Lu, {Chung Yu} and Huang, {Jui Chien} and Lee, {Ching Ting}",

note = "Funding Information: Manuscript received December 29, 2008. Current version published February 25, 2009. This work was supported in part by the National Science Council and in part by the Ministry of Economic Affairs, Taiwan, under Contracts NSC 97-2221-E009-156-MY2 and 97-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. A. del Alamo.",

year = "2009",

doi = "10.1109/LED.2009.2012447",

language = "English",

volume = "30",

pages = "213--215",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain

AU - Chang, Chia Ta

AU - Hsiao, Shih Kuang

AU - Chang, Edward Yi

AU - Lu, Chung Yu

AU - Huang, Jui Chien

AU - Lee, Ching Ting

N1 - Funding Information: Manuscript received December 29, 2008. Current version published February 25, 2009. This work was supported in part by the National Science Council and in part by the Ministry of Economic Affairs, Taiwan, under Contracts NSC 97-2221-E009-156-MY2 and 97-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2009

Y1 - 2009

N2 - This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.

AB - This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.

UR - http://www.scopus.com/inward/record.url?scp=62549118638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549118638&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2012447

DO - 10.1109/LED.2009.2012447

M3 - Article

AN - SCOPUS:62549118638

SN - 0741-3106

VL - 30

SP - 213

EP - 215

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain

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