Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain

Chia Ta Chang, Shih Kuang Hsiao, Edward Yi Chang, Chung Yu Lu, Jui Chien Huang, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.

Original languageEnglish
Pages (from-to)213-215
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number3
DOIs
Publication statusPublished - 2009 Feb 12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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