Channel-composition-dependent characteristics of δ-doped In x Al 1-x As/In y Ga 1-y As metamorphic high electron mobility transistors

Ching Sung Lee, Chia Jeng Chian, Wei-Chou Hsu, Ke Hua Su, Su Jen Yu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.

Original languageEnglish
Pages (from-to)1086-1092
Number of pages7
JournalJournal of the Korean Physical Society
Volume52
Issue number4
DOIs
Publication statusPublished - 2008 Jan 1

Fingerprint

high electron mobility transistors
linearity
power gain
high gain
indium
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{7ac9ec22aa0e4a439325aecd6dc22f9a,
title = "Channel-composition-dependent characteristics of δ-doped In x Al 1-x As/In y Ga 1-y As metamorphic high electron mobility transistors",
abstract = "This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.",
author = "Lee, {Ching Sung} and Chian, {Chia Jeng} and Wei-Chou Hsu and Su, {Ke Hua} and Yu, {Su Jen}",
year = "2008",
month = "1",
day = "1",
doi = "10.3938/jkps.52.1086",
language = "English",
volume = "52",
pages = "1086--1092",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

Channel-composition-dependent characteristics of δ-doped In x Al 1-x As/In y Ga 1-y As metamorphic high electron mobility transistors . / Lee, Ching Sung; Chian, Chia Jeng; Hsu, Wei-Chou; Su, Ke Hua; Yu, Su Jen.

In: Journal of the Korean Physical Society, Vol. 52, No. 4, 01.01.2008, p. 1086-1092.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Channel-composition-dependent characteristics of δ-doped In x Al 1-x As/In y Ga 1-y As metamorphic high electron mobility transistors

AU - Lee, Ching Sung

AU - Chian, Chia Jeng

AU - Hsu, Wei-Chou

AU - Su, Ke Hua

AU - Yu, Su Jen

PY - 2008/1/1

Y1 - 2008/1/1

N2 - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.

AB - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=43149119272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43149119272&partnerID=8YFLogxK

U2 - 10.3938/jkps.52.1086

DO - 10.3938/jkps.52.1086

M3 - Article

VL - 52

SP - 1086

EP - 1092

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -