Channel-composition-dependent characteristics of δ-doped In xAl1-xAs/InyGa1-yAs metamorphic high electron mobility transistors

Ching Sung Lee, Chia Jeng Chian, Wei Chou Hsu, Ke Hua Su, Su Jen Yu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.

Original languageEnglish
Pages (from-to)1086-1092
Number of pages7
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2008 Apr

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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