TY - JOUR
T1 - Channel electric field of moderate lightly-doped drain MOSFETs
AU - Liu, B. D.
N1 - Funding Information:
The author would like to thank Mr I. K. Chien for his technical assistance. This work was supported by the National Science Council, Republic of China.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1991/8
Y1 - 1991/8
N2 - The channel electric field distribution of moderate lightly-doped drain (MLDD) MOSFETs is simulated. The result is used to explain why the current driving capability, transconductance and degradation problem of LDD devices are improved by MLDD doping profile.
AB - The channel electric field distribution of moderate lightly-doped drain (MLDD) MOSFETs is simulated. The result is used to explain why the current driving capability, transconductance and degradation problem of LDD devices are improved by MLDD doping profile.
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U2 - 10.1080/00207219108925469
DO - 10.1080/00207219108925469
M3 - Article
AN - SCOPUS:0026202850
VL - 71
SP - 209
EP - 214
JO - International Journal of Electronics
JF - International Journal of Electronics
SN - 0020-7217
IS - 2
ER -