Channel electric field of moderate lightly-doped drain MOSFETs

B. D. Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The channel electric field distribution of moderate lightly-doped drain (MLDD) MOSFETs is simulated. The result is used to explain why the current driving capability, transconductance and degradation problem of LDD devices are improved by MLDD doping profile.

Original languageEnglish
Pages (from-to)209-214
Number of pages6
JournalInternational Journal of Electronics
Volume71
Issue number2
DOIs
Publication statusPublished - 1991 Aug

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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