Channel mobility of GeSi quantum-well p-MOSFETs

D. K. Nayak; J. C.S. Woo; J. S. Park; K. L. Wang; K. P. MacWilliams

Channel mobility of GeSi quantum-well p-MOSFETs

D. K. Nayak, J. C.S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.

Original language	English
Pages (from-to)	107-108
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1991 Dec
Event	1991 Symposium on VLSI Technology - Oiso, Jpn Duration: 1991 May 28 → 1991 May 30

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "Channel mobility of GeSi quantum-well p-MOSFETs",

abstract = "Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.",

author = "Nayak, {D. K.} and Woo, {J. C.S.} and Park, {J. S.} and Wang, {K. L.} and MacWilliams, {K. P.}",

year = "1991",

month = dec,

language = "English",

pages = "107--108",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Channel mobility of GeSi quantum-well p-MOSFETs

AU - Nayak, D. K.

AU - Woo, J. C.S.

AU - Park, J. S.

AU - Wang, K. L.

AU - MacWilliams, K. P.

PY - 1991/12

Y1 - 1991/12

N2 - Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.

AB - Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026399911&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0026399911

SN - 0743-1562

SP - 107

EP - 108

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 1991 Symposium on VLSI Technology

Y2 - 28 May 1991 through 30 May 1991

ER -

Channel mobility of GeSi quantum-well p-MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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