Channel mobility of GeSi quantum-well p-MOSFETs

D. K. Nayak, J. C.S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.

Original languageEnglish
Pages (from-to)107-108
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1991 Dec
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 1991 May 281991 May 30

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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