Measurements of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are discussed. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times that at 25 K. At very low temperature (approximately 10 K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1991 Dec|
|Event||1991 Symposium on VLSI Technology - Oiso, Jpn|
Duration: 1991 May 28 → 1991 May 30
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering