Channel mobility of GeSi quantum-well P-MOSFETs

D. K. Nayak, J. C.S. Woo, J. S. Park, K. L. Wang, K. P. Macwilliams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The results of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are presented. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with lowering of the temperature. The mobility at 8 K is found to be 3 times higher than that at 25 K. At very low temperature (∼ 10 K), the transition of channel transconductance with gate voltage from a high (GeSi channel) to a low (surface channel) value has been clearly observed.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages301-303
Number of pages3
ISBN (Electronic)078030036X, 9780780300361
DOIs
Publication statusPublished - 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 1991 May 221991 May 24

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period91-05-2291-05-24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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