Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFETs

Kazunari Ishimaru, Jone F. Chen, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Channel width dependence of hotcarrier induced degradation in pMOSFETs with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device due to the increase in the electron trapping efficiency of the gate oxide film. Mechanical stress may be responsible for this phenomenon.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages240-243
Number of pages4
ISBN (Electronic)2863322346
Publication statusPublished - 1998 Jan 1
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 1998 Sep 81998 Sep 10

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other28th European Solid-State Device Research Conference, ESSDERC 1998
CountryFrance
CityBordeaux
Period98-09-0898-09-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFETs'. Together they form a unique fingerprint.

Cite this