Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's

Kazunari Ishimaru, Jone-Fang Chen, Chenming Hu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.

Original languageEnglish
Pages (from-to)1532-1536
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume46
Issue number7
DOIs
Publication statusPublished - 1999 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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