Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering