Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's

Kazunari Ishimaru; Jone F. Chen; Chenming Hu

doi:10.1109/16.772507

Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's

Kazunari Ishimaru, Jone F. Chen, Chenming Hu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.

Original language	English
Pages (from-to)	1532-1536
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	7
DOIs	https://doi.org/10.1109/16.772507
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.772507

Cite this

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title = "Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's",

abstract = "Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.",

author = "Kazunari Ishimaru and Chen, {Jone F.} and Chenming Hu",

year = "1999",

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AU - Ishimaru, Kazunari

AU - Chen, Jone F.

AU - Hu, Chenming

PY - 1999

Y1 - 1999

N2 - Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.

AB - Channel width dependence of the hot-carrier induced degradation in pMOSFET's with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. Mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.

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U2 - 10.1109/16.772507

DO - 10.1109/16.772507

M3 - Article

AN - SCOPUS:0032633883

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's

Abstract

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