Abstract
The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) and 28.4 (34) GHz, respectively.
Original language | English |
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Pages (from-to) | 309-314 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 45 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2001 Feb |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry