Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kun Wei Lin, Kuo Hui Yu, Wen Lung Chang, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Wen Shiung Lour, Wen Chau Liu

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13 Citations (Scopus)

Abstract

The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) and 28.4 (34) GHz, respectively.

Original languageEnglish
Pages (from-to)309-314
Number of pages6
JournalSolid-State Electronics
Volume45
Issue number2
DOIs
Publication statusPublished - 2001 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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