Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kun Wei Lin; Kuo Hui Yu; Wen Lung Chang; Chin Chuan Cheng; Kuan Po Lin; Chih Hung Yen; Wen Shiung Lour; Wen Chau Liu

doi:10.1016/S0038-1101(01)00005-3

Characteristics and comparison of In_0.49Ga_0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kun Wei Lin, Kuo Hui Yu, Wen Lung Chang, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm² devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured f_T and f_max are 12 (16) and 28.4 (34) GHz, respectively.

Original language	English
Pages (from-to)	309-314
Number of pages	6
Journal	Solid-State Electronics
Volume	45
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(01)00005-3
Publication status	Published - 2001 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(01)00005-3

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@article{db6d31e4e40645e6bb3db9d3de04f6e4,

title = "Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors",

abstract = "The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) and 28.4 (34) GHz, respectively.",

author = "Lin, {Kun Wei} and Yu, {Kuo Hui} and Chang, {Wen Lung} and Cheng, {Chin Chuan} and Lin, {Kuan Po} and Yen, {Chih Hung} and Lour, {Wen Shiung} and Liu, {Wen Chau}",

year = "2001",

month = feb,

doi = "10.1016/S0038-1101(01)00005-3",

language = "English",

volume = "45",

pages = "309--314",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

}

Characteristics and comparison of In_0.49Ga_0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors. / Lin, Kun Wei; Yu, Kuo Hui; Chang, Wen Lung; Cheng, Chin Chuan; Lin, Kuan Po; Yen, Chih Hung; Lour, Wen Shiung; Liu, Wen Chau.

In: Solid-State Electronics, Vol. 45, No. 2, 02.2001, p. 309-314.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

AU - Lin, Kun Wei

AU - Yu, Kuo Hui

AU - Chang, Wen Lung

AU - Cheng, Chin Chuan

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

PY - 2001/2

Y1 - 2001/2

N2 - The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) and 28.4 (34) GHz, respectively.

AB - The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) and 28.4 (34) GHz, respectively.

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