Characteristics and improvement in hot-carrier reliability of sub-micrometer High-voltage double diffused drain metal-oxide-semiconductor field-effect transistors

Jone-Fang Chen, Kuo Ming Wu, J. R. Lee, Yan Kuin Su, H. C. Wang, Yu-Cheng Lin, S. L. Hsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The hot-carrier reliability of 1.2 V high-voltage n-channel double diffused drain metal-oxide-semiconductor (DDDMOS) field-effect transistors with various n-type double diffusion (NDD) implant dosages is investigated. A high NDD implant dosage results in a high substrate current; however, on-resistance (Ron) degradation is low. The damage location shifting toward the channel is responsible for this unexpected low Ron degradation. Technology computer-aided design (TCAD) simulation and charge pumping measurements are carried out to identify the damage location. Our analysis results reveal that an increase in NDD dosage is effective for improving the reliability of the DDDMOS field-effect transistors.

Original languageEnglish
Pages (from-to)2019-2022
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characteristics and improvement in hot-carrier reliability of sub-micrometer High-voltage double diffused drain metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

Cite this