Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector

Der Feng Guo, Chih Hung Yen, Jung Hui Tsai, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journalArticle

Abstract

In order to achieve high optical sensitivity and low holding power, a wide-gap carrier confinement layer was introduced into the collector region of an n-p-n-heterostructure optoelectronic switch. A similar device without the confinement layer was also fabricated to demonstrate the performance improvement. Both devices were found to have bistable electrical states: a high-impedance OFF state connected to a low-impedance ON state by a region of negative differential resistance. The functional characteristics were based on avalanche multiplication.

Original languageEnglish
Pages (from-to)H13-H15
JournalJournal of the Electrochemical Society
Volume154
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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