Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel

Jun Chin Huang, Wei-Chou Hsu, Ching Sung Lee, Dong Hai Huang, Ming Feng Huang

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Various static and microwave performances on InAlAs/InGaAs/InP HEMTs with a linearly-graded InxGa1-xAs channel (LGC-HEMT) have been comprehensively investigated and compared to those having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability by employing the linearly-graded channel have contributed to superior extrinsic transconductance (gm) of 346 mS mm-1, gate-voltage swing (GVS) of 0.5 V (182 mA), unity-gain cut-off frequency (ft) of 41 GHz and maximum oscillation frequency (fmax) of 63 GHz, with an improved frequency operation plateau at 300 K for a gate dimension of 0.65 × 200 νm2. Furthermore, improved kink effects leading to a lower gate leakage current of 0.7 νA mm-1, lower output conductance (g d) of 3.6 mS mm-1, higher voltage gain (AV) of 93.1, higher off-state breakdown voltage of 16.3 V and superior output power characteristics have also been discussed.

Original languageEnglish
Pages (from-to)619-625
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Carrier transport
output
Cutoff frequency
Transconductance
Electric potential
transconductance
Electric breakdown
electrical faults
Leakage currents
unity
high voltages
plateaus
leakage
cut-off
Microwaves
microwaves
oscillations
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Huang, Jun Chin ; Hsu, Wei-Chou ; Lee, Ching Sung ; Huang, Dong Hai ; Huang, Ming Feng. / Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 5. pp. 619-625.
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Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel. / Huang, Jun Chin; Hsu, Wei-Chou; Lee, Ching Sung; Huang, Dong Hai; Huang, Ming Feng.

In: Semiconductor Science and Technology, Vol. 21, No. 5, 01.05.2006, p. 619-625.

Research output: Contribution to journalArticle

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