Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded In_xGa_1-xAs channel

Chemical Compounds

• Breakdown Voltage 97%
• Conductance 62%
• Dimension 49%
• Electron Mobility 77%
• Fluorescence Maxima 85%
• Leakage Current 85%
• Microwave 52%
• Transconductance 100%
• Voltage 47%

Physics & Astronomy

• cut-off 18%
• electric potential 11%
• electrical faults 21%
• high electron mobility transistors 67%
• high voltages 18%
• leakage 17%
• microwaves 14%
• oscillations 13%
• output 25%
• performance 9%
• plateaus 20%
• transconductance 23%
• unity 19%

Engineering & Materials Science

• Carrier transport 33%
• Cutoff frequency 25%
• Electric breakdown 24%
• Electric potential 22%
• High electron mobility transistors 75%
• Leakage currents 23%
• Microwaves 19%
• Transconductance 25%