TY - JOUR
T1 - Characteristics of δ-doped InP heterostructures using In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer
AU - Hsu, Wei Chou
AU - Lee, Ching Sung
AU - Lin, Yu Shyan
PY - 2002/2/1
Y1 - 2002/2/1
N2 - Single and coupled δ-doped InP channel heterostructure field-effect transistors using high barrier height (>0.73 eV) and wide energy band gap (∼1.8 eV) In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer have been successfully grown by low-pressure metalorganic chemical vapor deposition. Comprehensive material characterizations have been conducted and investigated for various growth specifications, including the Hall measurement, secondary ion mass spectrometry, double crystal x-ray diffraction technique, and photoluminescence measurement. Excellent gate-source breakdown characteristics (>40 V), low leakage current (111 μA/mm), improved gate voltage swing, improved carrier mobility, good saturation and pinch-off properties, and low output conductance (0.5 mS/mm) have been achieved by using the high barrier height In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer and InP channels. The proposed structure provides good potential for high-power circuit applications.
AB - Single and coupled δ-doped InP channel heterostructure field-effect transistors using high barrier height (>0.73 eV) and wide energy band gap (∼1.8 eV) In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer have been successfully grown by low-pressure metalorganic chemical vapor deposition. Comprehensive material characterizations have been conducted and investigated for various growth specifications, including the Hall measurement, secondary ion mass spectrometry, double crystal x-ray diffraction technique, and photoluminescence measurement. Excellent gate-source breakdown characteristics (>40 V), low leakage current (111 μA/mm), improved gate voltage swing, improved carrier mobility, good saturation and pinch-off properties, and low output conductance (0.5 mS/mm) have been achieved by using the high barrier height In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer and InP channels. The proposed structure provides good potential for high-power circuit applications.
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U2 - 10.1063/1.1421631
DO - 10.1063/1.1421631
M3 - Article
AN - SCOPUS:0036469343
VL - 91
SP - 1385
EP - 1390
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
ER -