Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)

Wei Chou Wang, Hsi Jen Pan, Kun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng, Chih Hung Yen, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review


A novel narrow-base heterojunction bipolar transistor and a multiple-state switching device based on the InP/InGaAlAs material system have been fabricated and demonstrated. Common-emitter current gains up to 28 and 25 are obtained. Due to the use of an InGaAlAs narrow base, interesting topee-shaped current-voltage characteristics presented in the transistor active regime and negative-differential-resistance (NDR) loci are observed under the applied base current of IB = 2 μA/step. In addition, multiple-route and multiple-state S-shaped NDR characteristics are observed at 77 K due to the insertion of the InGaAs quantum well in the base-collector junction. The topee-shaped NDR phenomena are attributed to the modulation of the potential spike at the base-emitter heterojunction. However, the switching behaviours are due to the avalanche multiplication, confinement effect and two-stage barrier lowering effect.

Original languageEnglish
Pages (from-to)339-344
Number of pages6
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2001 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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