Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

R. T. Hsu, W. C. Hsu, M. J. Kao, J. S. Wang

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10 Citations (Scopus)


A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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