Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

R. T. Hsu; W. C. Hsu; M. J. Kao; J. S. Wang

doi:10.1063/1.113455

Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

R. T. Hsu, W. C. Hsu, M. J. Kao, J. S. Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A δ-doped GaAs/In_0.2Ga_0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm²/v s and 2×10¹²(5.5×10¹¹)cm^-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

Original language	English
Pages (from-to)	2864
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113455
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.113455

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title = "Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor",

abstract = "A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.",

author = "Hsu, {R. T.} and Hsu, {W. C.} and Kao, {M. J.} and Wang, {J. S.}",

year = "1995",

doi = "10.1063/1.113455",

language = "English",

pages = "2864",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

AU - Hsu, R. T.

AU - Hsu, W. C.

AU - Kao, M. J.

AU - Wang, J. S.

PY - 1995

Y1 - 1995

N2 - A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

AB - A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

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DO - 10.1063/1.113455

M3 - Article

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SN - 0003-6951

SP - 2864

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

Abstract

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