Characteristics of a double-barrier-emitter triangular-barrier ptoelectronic switch (DTOS)

Jing Yuh Chen, Der Feng Guo, Chun Yuan Chen, Po Hsien Lai, Yan Ying Tsai, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, a triangular-barrier and a double-barrier structure were integrated to form a bi-directional switching device. In the structure center of the triangular barrier, a delta-doped (δ -doped) quantum well was inserted to enhance the carrier accumulation. Owing to the resonant tunneling through the double barrier and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena would occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively.

Original languageEnglish
Title of host publicationIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
Pages245-247
Number of pages3
Publication statusPublished - 2004
EventIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings - Beijing, China
Duration: 2004 Sep 62004 Sep 10

Other

OtherIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
CountryChina
CityBeijing
Period04-09-0604-09-10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Characteristics of a double-barrier-emitter triangular-barrier ptoelectronic switch (DTOS)'. Together they form a unique fingerprint.

  • Cite this

    Chen, J. Y., Guo, D. F., Chen, C. Y., Lai, P. H., Tsai, Y. Y., & Liu, W-C. (2004). Characteristics of a double-barrier-emitter triangular-barrier ptoelectronic switch (DTOS). In IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings (pp. 245-247)