Characteristics of a GaAs-InGaAs delta-doped quantum-well switch

Wei-Chou Hsu; Der Feng Guo; Wen-Chau Liu; Wen Shiung Lour

doi:10.1063/1.353392

Characteristics of a GaAs-InGaAs delta-doped quantum-well switch

Wei-Chou Hsu, Der Feng Guo, Wen-Chau Liu, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p⁺)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.

Original language	English
Pages (from-to)	8615-8617
Number of pages	3
Journal	Journal of Applied Physics
Volume	73
Issue number	12
DOIs	https://doi.org/10.1063/1.353392
Publication status	Published - 1993 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Characteristics of a GaAs-InGaAs delta-doped quantum-well switch",

abstract = "A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p+)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.",

author = "Wei-Chou Hsu and Guo, {Der Feng} and Wen-Chau Liu and Lour, {Wen Shiung}",

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AU - Hsu, Wei-Chou

AU - Guo, Der Feng

AU - Liu, Wen-Chau

AU - Lour, Wen Shiung

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p+)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.

AB - A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p+)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.

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