Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

Der Feng Guo, Lih Wen Laih, Jung Hui Tsai, Wen Chau Liu, Wei Chou Hsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A switching device, with a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well, has been fabricated and demonstrated. An N-shaped negative-differential-resistance phenomenon resulting from the resonant-tunneling effect through the miniband is observed in the current-voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak-current voltage, valley-current voltage, peak-current density, and valley-current density are studied and discussed.

Original languageEnglish
Pages (from-to)2782-2785
Number of pages4
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 1995 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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