TY - JOUR
T1 - Characteristics of a GaAs metal-n+-v-δ (p+)-v-n+ switch
AU - Guo, Der Feng
AU - Yih, Shiu Ren
AU - Liang, Jing Tong
AU - Liu, Wen Chau
N1 - Funding Information:
Acknowledgements--The authors would like to thank Miss H. R. Sze for her technique assistances. This work was supported by the National Science Council of Republic of China under contract No. NSC 82-0404-E006-274.
PY - 1994/2
Y1 - 1994/2
N2 - A new GaAs switching device consisting of a metal-n+-v-δ(p+)-v-n+ structure has been fabricated and demonstrated. An InGaAs delta-doped quantum well was employed to provide the potential barrier for carrier transport and improve the confinement effect of holes. When sufficient anode-to-cathode voltage VAK was applied to this device, an interestingly double S-shaped negative-differential-resistance (NDR) characteristic was obtained at the temperature lower than -40°C. This was caused by the sequential avalanche multiplications in the n--GaAs (v) layer near the anode electrode and the Schottky-semiconductor (M-S) junction. However, only a single S-shaped NDR phenomenon was observed at higher temperatures due to the poor carrier confinement effect of holes in the delta-doped quantum well. The influence of temperature on the device performance was also investigated. From experimental results, it is known that the environmental temperature plays an important role on the NDR performances. Consequently, if device parameters are appropriately adjusted, this device shows a good potenital for multiple-value logic circuit applications.
AB - A new GaAs switching device consisting of a metal-n+-v-δ(p+)-v-n+ structure has been fabricated and demonstrated. An InGaAs delta-doped quantum well was employed to provide the potential barrier for carrier transport and improve the confinement effect of holes. When sufficient anode-to-cathode voltage VAK was applied to this device, an interestingly double S-shaped negative-differential-resistance (NDR) characteristic was obtained at the temperature lower than -40°C. This was caused by the sequential avalanche multiplications in the n--GaAs (v) layer near the anode electrode and the Schottky-semiconductor (M-S) junction. However, only a single S-shaped NDR phenomenon was observed at higher temperatures due to the poor carrier confinement effect of holes in the delta-doped quantum well. The influence of temperature on the device performance was also investigated. From experimental results, it is known that the environmental temperature plays an important role on the NDR performances. Consequently, if device parameters are appropriately adjusted, this device shows a good potenital for multiple-value logic circuit applications.
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U2 - 10.1016/0038-1101(94)90073-6
DO - 10.1016/0038-1101(94)90073-6
M3 - Article
AN - SCOPUS:0028377621
SN - 0038-1101
VL - 37
SP - 223
EP - 229
JO - Solid State Electronics
JF - Solid State Electronics
IS - 2
ER -