Characteristics of a low-damage GaN-based light-emitting diode using a KOH-treated wet-etching approach

Yi Jung Liu, Chih Hung Yen, Kuo Hui Yu, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A GaN-based light emitting diode (LED) with an air-buffer layer and textured sidewalls is fabricated and investigated. A hot KOH etching solution is used to develop the desired textured sidewalls. Many sidewalls with triangular-like shape are produced along the specific direction of (1100), where photons introduced within multiple-quantum-well (MQW) exhibit more opportunities to scatter into the air. Based on the lateral etching, many triangular-shaped cones are formed on the patterned sapphire substrate (PSS). At 20 mA, as compared with the LED without KOH treatment, the studied device exhibits improved output power by 11.7% without deteriorating its electrical characteristics. This phenomenon can be attributed to the enhanced output light from vertical and lateral directions due to the formation of an air-buffer layer as well as textured sidewalls. The thermal reliability of the studied device is also comparable to the one without KOH-treated process.

Original languageEnglish
Pages (from-to)821041-821046
Number of pages6
JournalJapanese Journal of Applied Physics
Volume48
Issue number8 Part 1
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Wet etching
Light emitting diodes
light emitting diodes
etching
Buffer layers
damage
Etching
air
buffers
Air
output
Sapphire
Semiconductor quantum wells
Cones
cones
sapphire
Photons
quantum wells
photons
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Liu, Yi Jung ; Yen, Chih Hung ; Yu, Kuo Hui ; Chen, Tzu Pin ; Chen, Li Yang ; Tsai, Tsung Han ; Liu, Wen-Chau. / Characteristics of a low-damage GaN-based light-emitting diode using a KOH-treated wet-etching approach. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 8 Part 1. pp. 821041-821046.
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abstract = "A GaN-based light emitting diode (LED) with an air-buffer layer and textured sidewalls is fabricated and investigated. A hot KOH etching solution is used to develop the desired textured sidewalls. Many sidewalls with triangular-like shape are produced along the specific direction of (1100), where photons introduced within multiple-quantum-well (MQW) exhibit more opportunities to scatter into the air. Based on the lateral etching, many triangular-shaped cones are formed on the patterned sapphire substrate (PSS). At 20 mA, as compared with the LED without KOH treatment, the studied device exhibits improved output power by 11.7{\%} without deteriorating its electrical characteristics. This phenomenon can be attributed to the enhanced output light from vertical and lateral directions due to the formation of an air-buffer layer as well as textured sidewalls. The thermal reliability of the studied device is also comparable to the one without KOH-treated process.",
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Characteristics of a low-damage GaN-based light-emitting diode using a KOH-treated wet-etching approach. / Liu, Yi Jung; Yen, Chih Hung; Yu, Kuo Hui; Chen, Tzu Pin; Chen, Li Yang; Tsai, Tsung Han; Liu, Wen-Chau.

In: Japanese Journal of Applied Physics, Vol. 48, No. 8 Part 1, 01.12.2009, p. 821041-821046.

Research output: Contribution to journalArticle

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AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen-Chau

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