Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure

Der Feng Guo, Jing Yuh Chen, Hung Ming Chuang, Chun Yuan Chen, Wen Chau Liu

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1 Citation (Scopus)


Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage Vs, holding voltage VH, and holding current IH, and decreases the switching current IS, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.

Original languageEnglish
Pages (from-to)542-547
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2004 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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