Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure

Der Feng Guo; Jing Yuh Chen; Hung Ming Chuang; Chun Yuan Chen; Wen Chau Liu

doi:10.1109/TED.2004.823804

Characteristics of a new BBOS with an AlGaAs-δ(n⁺)-GaAs-InAlGaP collector structure

Der Feng Guo, Jing Yuh Chen, Hung Ming Chuang, Chun Yuan Chen, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n⁺)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V_s, holding voltage V_H, and holding current I_H, and decreases the switching current I_S, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.

Original language	English
Pages (from-to)	542-547
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	4
DOIs	https://doi.org/10.1109/TED.2004.823804
Publication status	Published - 2004 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.823804

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@article{cbdd91f56eb74feebd1931a07dd2e3c5,

title = "Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure",

abstract = "Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage Vs, holding voltage VH, and holding current IH, and decreases the switching current IS, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.",

author = "Guo, {Der Feng} and Chen, {Jing Yuh} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received August 26, 2003; revised December 18, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 92-2218-E-013-001. The review of this paper was arranged by Editor P. Bhattacharya.",

year = "2004",

month = apr,

doi = "10.1109/TED.2004.823804",

language = "English",

volume = "51",

pages = "542--547",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure

AU - Guo, Der Feng

AU - Chen, Jing Yuh

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received August 26, 2003; revised December 18, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 92-2218-E-013-001. The review of this paper was arranged by Editor P. Bhattacharya.

PY - 2004/4

Y1 - 2004/4

N2 - Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage Vs, holding voltage VH, and holding current IH, and decreases the switching current IS, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.

AB - Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage Vs, holding voltage VH, and holding current IH, and decreases the switching current IS, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160°C. This high-temperature performance provides the studied device with potential high-temperature applications.

UR - http://www.scopus.com/inward/record.url?scp=1942423763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942423763&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.823804

DO - 10.1109/TED.2004.823804

M3 - Article

AN - SCOPUS:1942423763

SN - 0018-9383

VL - 51

SP - 542

EP - 547

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Characteristics of a new BBOS with an AlGaAs-δ(n⁺)-GaAs-InAlGaP collector structure

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