Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure

Po Hsien Lai, Hung Ming Chuang, Sheng Fu Tsai, Chung I. Kao, Horng Rung Chen, Chun Yuan Chen, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A new camel-gate field effect transistor (CAMFET) with a composite channel structure has been fabricated and demonstrated. Due to the n+-InGaP/ p+-InGaP/GaAs camel gate and InGaAs/GaAs composite channel structures employed, good device performance is observed. Experimentally, at room temperature, a gate-drain breakdown voltage over 15V, maximum transconductance gm,max of 111.5 mS mm-1, voltage gain AV of 93.4, unity current gain cut-off frequency fT of 16.2 GHz and maximum oscillation frequency unity fmax of 24.2 GHz are obtained simultaneously for a 1 × 100 μm2 device. The studied device also shows good properties in a higher temperature regime. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over the operating temperature range from 300 to 420 K. Therefore, the studied device provides promise for high-temperature and high-performance microwave electronic applications.

Original languageEnglish
Pages (from-to)912-916
Number of pages5
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - 2004 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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