Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Kun Wei Lin; Huey Ing Chen; Chin Chuan Cheng; Hung Ming Chuang; Chun Tsen Lu; Wen Chau Liu

doi:10.1016/S0925-4005(03)00347-2

Characteristics of a new Pt/oxide/In_0.49Ga_0.51P hydrogen-sensing Schottky diode

Kun Wei Lin, Huey Ing Chen, Chin Chuan Cheng, Hung Ming Chuang, Chun Tsen Lu, Wen Chau Liu

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28 Citations (Scopus)

Abstract

A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

Original language	English
Pages (from-to)	145-151
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	94
Issue number	2
DOIs	https://doi.org/10.1016/S0925-4005(03)00347-2
Publication status	Published - 2003 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0925-4005(03)00347-2

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title = "Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode",

abstract = "A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundstr{\"o}m isotherm.",

author = "Lin, {Kun Wei} and Chen, {Huey Ing} and Cheng, {Chin Chuan} and Chuang, {Hung Ming} and Lu, {Chun Tsen} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contact No. NSC 91-2215-E-006-016. ",

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doi = "10.1016/S0925-4005(03)00347-2",

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T1 - Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Cheng, Chin Chuan

AU - Chuang, Hung Ming

AU - Lu, Chun Tsen

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contact No. NSC 91-2215-E-006-016.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

AB - A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

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JO - Sensors and Actuators, B: Chemical

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Characteristics of a new Pt/oxide/In_0.49Ga_0.51P hydrogen-sensing Schottky diode

Abstract

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