Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Kun Wei Lin, Huey Ing Chen, Chin Chuan Cheng, Hung Ming Chuang, Chun Tsen Lu, Wen Chau Liu

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28 Citations (Scopus)


A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

Original languageEnglish
Pages (from-to)145-151
Number of pages7
JournalSensors and Actuators, B: Chemical
Issue number2
Publication statusPublished - 2003 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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