Characteristics of a Pd/AlGaN/GaN transistor processed using the sensitization, activation, and electroless plating (EP) approaches

Chien Chang Huang, Huey Ing Chen, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Po Cheng Chou, Jian Kai Liou, Wen Chau Liu

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7 Citations (Scopus)

Abstract

The characteristics of a Pd/AlGaN/GaN high electron mobility transistor (HEMT) processed using the sensitization, activation, and electroless plating (EP) deposition approach are studied and demonstrated. A dense and uniform Pd seed layer is achieved by using the additional sensitization and activation processes. Therefore, the superior characteristics in turn-on voltage (1.79 V), gate leakage current (9 nA), maximum extrinsic transconductance (95.8 mS/mm), and maximum drain saturation current (373.8 mA/mm) are obtained for a 1 μm gate HEMT at 300 K. As increasing the temperature from 300 to 600 K, the reduced variation and degradation rates are also found for the studied EP-gate device. Furthermore, superior hydrogen gas sensing performance, including large drain current change (34.1 mA/mm) and high sensing response (3469%), is observed under 1%H2/air ambience. Consequently, the studied EP-gate AlGaN/GaN HEMT shows the promise for high-performance electronic device and hydrogen sensor applications.

Original languageEnglish
Pages (from-to)D637-D641
JournalJournal of the Electrochemical Society
Volume159
Issue number11
DOIs
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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