Characteristics of a Pt/NiO thin film-based ammonia gas sensor

Huey Ing Chen; Cheng Yu Hsiao; Wei Cheng Chen; Ching Hong Chang; Tzu Chieh Chou; I. Ping Liu; Kun Wei Lin; Wen Chau Liu

doi:10.1016/j.snb.2017.10.032

Characteristics of a Pt/NiO thin film-based ammonia gas sensor

Huey Ing Chen, Cheng Yu Hsiao, Wei Cheng Chen, Ching Hong Chang, Tzu Chieh Chou, I. Ping Liu, Kun Wei Lin, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH₃/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

Original language	English
Pages (from-to)	962-967
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	256
DOIs	https://doi.org/10.1016/j.snb.2017.10.032
Publication status	Published - 2018 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "Characteristics of a Pt/NiO thin film-based ammonia gas sensor",

abstract = "The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.",

author = "Chen, {Huey Ing} and Hsiao, {Cheng Yu} and Chen, {Wei Cheng} and Chang, {Ching Hong} and Chou, {Tzu Chieh} and Liu, {I. Ping} and Lin, {Kun Wei} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No . NSC-100-2221-E-006-244-MY3 , and the Advanced Optoelectronic Technology Center , National Cheng Kung University . ",

year = "2018",

month = mar,

doi = "10.1016/j.snb.2017.10.032",

language = "English",

volume = "256",

pages = "962--967",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

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T1 - Characteristics of a Pt/NiO thin film-based ammonia gas sensor

AU - Chen, Huey Ing

AU - Hsiao, Cheng Yu

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Chou, Tzu Chieh

AU - Liu, I. Ping

AU - Lin, Kun Wei

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No . NSC-100-2221-E-006-244-MY3 , and the Advanced Optoelectronic Technology Center , National Cheng Kung University .

PY - 2018/3

Y1 - 2018/3

N2 - The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

AB - The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

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