Abstract
The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.
| Original language | English |
|---|---|
| Pages (from-to) | 962-967 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 256 |
| DOIs | |
| Publication status | Published - 2018 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Characteristics of a Pt/NiO thin film-based ammonia gas sensor. / Chen, Huey-Ing; Hsiao, Cheng Yu; Chen, Wei Cheng; Chang, Ching Hong; Chou, Tzu Chieh; Liu, I-Ping; Lin, Kun Wei; Liu, Wen-Chau.
In: Sensors and Actuators, B: Chemical, Vol. 256, 01.03.2018, p. 962-967.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of a Pt/NiO thin film-based ammonia gas sensor
AU - Chen, Huey-Ing
AU - Hsiao, Cheng Yu
AU - Chen, Wei Cheng
AU - Chang, Ching Hong
AU - Chou, Tzu Chieh
AU - Liu, I-Ping
AU - Lin, Kun Wei
AU - Liu, Wen-Chau
PY - 2018/3/1
Y1 - 2018/3/1
N2 - The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.
AB - The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.
UR - http://www.scopus.com/inward/record.url?scp=85030866269&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85030866269&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2017.10.032
DO - 10.1016/j.snb.2017.10.032
M3 - Article
VL - 256
SP - 962
EP - 967
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
ER -