Characteristics of a Pt/NiO thin film-based ammonia gas sensor

Huey Ing Chen; Cheng Yu Hsiao; Wei Cheng Chen; Ching Hong Chang; Tzu Chieh Chou; I. Ping Liu; Kun Wei Lin; Wen Chau Liu

doi:10.1016/j.snb.2017.10.032

Characteristics of a Pt/NiO thin film-based ammonia gas sensor

Huey Ing Chen, Cheng Yu Hsiao, Wei Cheng Chen, Ching Hong Chang, Tzu Chieh Chou, I. Ping Liu, Kun Wei Lin, Wen Chau Liu

Research output: Contribution to journal › Article

34 Citations (Scopus)

Abstract

The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH₃/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

Original language	English
Pages (from-to)	962-967
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	256
DOIs	https://doi.org/10.1016/j.snb.2017.10.032
Publication status	Published - 2018 Mar

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Chen, H. I., Hsiao, C. Y., Chen, W. C., Chang, C. H., Chou, T. C., Liu, I. P., Lin, K. W., & Liu, W. C. (2018). Characteristics of a Pt/NiO thin film-based ammonia gas sensor. Sensors and Actuators, B: Chemical, 256, 962-967. https://doi.org/10.1016/j.snb.2017.10.032

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abstract = "The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.",

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AU - Chou, Tzu Chieh

AU - Liu, I. Ping

AU - Lin, Kun Wei

AU - Liu, Wen Chau

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AB - The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

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10.1016/j.snb.2017.10.032