Characteristics of a Pt/NiO thin film-based ammonia gas sensor

Huey Ing Chen, Cheng Yu Hsiao, Wei Cheng Chen, Ching Hong Chang, Tzu Chieh Chou, I. Ping Liu, Kun Wei Lin, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 °C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.

Original languageEnglish
Pages (from-to)962-967
Number of pages6
JournalSensors and Actuators, B: Chemical
Publication statusPublished - 2018 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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